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Discrete Semiconductor Products
NCG225L75NF8M1
ObsoleteON Semiconductor
IGBT 750 V, 225 A FIELD STOP TRENCH GEN4 (FS4) BARE DIE. PAIRING WITH NCD225E75F8M1
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Discrete Semiconductor Products
NCG225L75NF8M1
ObsoleteON Semiconductor
IGBT 750 V, 225 A FIELD STOP TRENCH GEN4 (FS4) BARE DIE. PAIRING WITH NCD225E75F8M1
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | NCG225L75NF8M1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 225 A |
| Current - Collector Pulsed (Icm) | 675 A |
| Gate Charge | 690 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Die |
| Supplier Device Package | Wafer |
| Td (on/off) @ 25°C | 122 ns, 104 ns |
| Test Condition | 2 Ohm, 400 V, 225 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 750 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NCG225L75NF8M1 Series
NCG225L75NF8M1 is a 750 V, 224 A rated Field Stop 4 (FS4) Trench IGBT bare die with a die size of 10 mm x 10 mm. it's suitable for back side and double side sintering attachment inside traction module
Documents
Technical documentation and resources