Discrete Semiconductor Products

VF30120S-E3/4W

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DIODE SCHOTTKY 120V 30A ITO220AB

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 30A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	VF30120S-E3/4W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Speed	500 ns, 200 mA
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VF30120C-E3/4W	120 V	800 µA	1 Pair Common Cathode	-40 °C	150 °C	ITO-220AB	15 A	200 mA 500 ns	970 mV	TO-220-3 Full Pack Isolated Tab	Through Hole	Schottky
Vishay General Semiconductor - Diodes Division VF30120SG-M3/4W	120 V	500 µA		-40 °C	150 °C	ITO-220AB		200 mA 500 ns		TO-220-3 Full Pack Isolated Tab	Through Hole	Schottky	30 A	1.28 V
Vishay General Semiconductor - Diodes Division VF30120S-E3/4W	120 V	500 µA		-40 °C	150 °C	ITO-220AB		200 mA 500 ns		TO-220-3 Full Pack Isolated Tab	Through Hole	Schottky	30 A	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 120 V 30A Through Hole ITO-220AB

Technical documentation and resources