AFGH4L40T120RWD-STD
ActiveIGBT - AUTOMOTIVE GRADE 1200 V 40 A, TO-247 4L
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AFGH4L40T120RWD-STD
ActiveIGBT - AUTOMOTIVE GRADE 1200 V 40 A, TO-247 4L
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AFGH4L40T120RWD-STD |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.85 | |
| 10 | $ 6.77 | |||
| 100 | $ 5.03 | |||
| 500 | $ 4.47 | |||
| ON Semiconductor | N/A | 1 | $ 4.77 | |
Description
General part information
AFGH4L40T120RWD-STD Series
AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
Documents
Technical documentation and resources