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Discrete Semiconductor Products

NST847BMX2T5G

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ON Semiconductor

45V 200@2MA,5V 100MA NPN X2-DFN-3(1X0.6) BIPOLAR (BJT) ROHS

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Product Image
Discrete Semiconductor Products

NST847BMX2T5G

Active
ON Semiconductor

45V 200@2MA,5V 100MA NPN X2-DFN-3(1X0.6) BIPOLAR (BJT) ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNST847BMX2T5G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0402 (1006 Metric)
Power - Max [Max]225 mW
Supplier Device Package3-X2DFN (1x0.6)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.20
100$ 0.12
500$ 0.09
1000$ 0.08
2000$ 0.07
Digi-Reel® 1$ 0.32
10$ 0.20
100$ 0.12
500$ 0.09
1000$ 0.08
2000$ 0.07
Tape & Reel (TR) 8000$ 0.06
16000$ 0.05
24000$ 0.05
40000$ 0.04
56000$ 0.04
80000$ 0.03
200000$ 0.04
LCSCPiece 1$ 0.11
200$ 0.04
500$ 0.04
1000$ 0.04
NewarkEach (Supplied on Full Reel) 6000$ 0.06
12000$ 0.05
18000$ 0.05
30000$ 0.04
ON SemiconductorN/A 1$ 0.03

Description

General part information

NST847BMX2 Series

The NPN Bipolar Transistor is designed for use in amplification and switching applications. The device is housed in the SOT-883 package, which is designed for lower power surface mount applications. Because of its small size, it is suited for use in smartphone, smart−watch, or many other portable/wearable applications where board space comes at a premium.

Documents

Technical documentation and resources