Discrete Semiconductor Products

BAW62

Obsolete

DIODE GEN PURP 75V 300MA DO35

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 75V 300MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAW62

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Package / Case	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
ON Semiconductor BAW62_T50A	300 mA	Axial DO-204AH DO-35	200 mA 500 ns	Standard	75 V	Through Hole	2 pF	1 V	175 °C	DO-35	5 µA	4 ns
ON Semiconductor BAW62	300 mA	Axial DO-204AH DO-35	200 mA 500 ns	Standard	75 V	Through Hole	2 pF	1 V	175 °C	DO-35	5 µA	4 ns
ON Semiconductor BAW62	300 mA	Axial DO-204AH DO-35	200 mA 500 ns	Standard	75 V	Through Hole	2 pF	1 V	175 °C	DO-35	5 µA	4 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 75 V 300mA Through Hole DO-35

Technical documentation and resources