Discrete Semiconductor Products

ER301A-AP

Obsolete

DIODE GEN PURP 150V 3A DO201AD

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 150V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	ER301A-AP

Capacitance @ Vr, F	35 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Capacitance @ Vr, F	Mounting Type	Technology	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Micro Commercial Components ER301A-AP	35 pF	Through Hole	Standard	DO-201AD Axial	DO-201AD	35 ns	950 mV	200 mA 500 ns	3 A	5 µA	150 °C	-55 °C
Micro Commercial Components ER301A-AP	35 pF	Through Hole	Standard	DO-201AD Axial	DO-201AD	35 ns	950 mV	200 mA 500 ns	3 A	5 µA	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 150 V 3A Through Hole DO-201AD

Technical documentation and resources