Discrete Semiconductor Products

IXTA26P20P

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Littelfuse/Commercial Vehicle Products

DISC MOSFET P CHANNEL-POLAR TO-263D2

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Discrete Semiconductor Products

IXTA26P20P

Active

Littelfuse/Commercial Vehicle Products

DISC MOSFET P CHANNEL-POLAR TO-263D2

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA26P20P

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTA26P20P Series

Disc Mosfet P Channel-Polar TO-263D2

Part	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Littelfuse/Commercial Vehicle Products IXTA26P20P-TRL	P-Channel	200 V	TO-263 (D2PAK)	10 V	26 A	MOSFET (Metal Oxide)	300 W	4 V	170 mOhm	Surface Mount	2740 pF	56 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C
Littelfuse/Commercial Vehicle Products IXTA26P20P	P-Channel	200 V	TO-263AA	10 V	26 A	MOSFET (Metal Oxide)	300 W	4 V	170 mOhm	Surface Mount	2740 pF	56 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.62
		50	$ 5.29
		100	$ 4.73
		500	$ 4.17
		1000	$ 3.76
		2000	$ 3.52

Description

General part information

IXTA26P20P Series

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching

Documents

Technical documentation and resources