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8-Power VDFN
Discrete Semiconductor Products

PXN011-100QSJ

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Nexperia USA Inc.

N-CHANNEL 100 V, 11 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

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8-Power VDFN
Discrete Semiconductor Products

PXN011-100QSJ

Active
Nexperia USA Inc.

N-CHANNEL 100 V, 11 MOHM, STANDARD LEVEL TRENCH MOSFET IN MLPAK33

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN011-100QSJ
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]66 W
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.60
10$ 0.51
100$ 0.36
500$ 0.31
1000$ 0.28
Digi-Reel® 1$ 0.60
10$ 0.51
100$ 0.36
500$ 0.31
1000$ 0.28
N/A 3098$ 1.24
Tape & Reel (TR) 3000$ 0.23
6000$ 0.22
9000$ 0.21
15000$ 0.21

Description

General part information

PXN011-100QS Series

General purpose MOSFET for standard applications, 56 A, standard level N-channel enhancement mode Power MOSFET in MLPAK33 package.