Specification	SI7615CDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds	3860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

SI7615 Series

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7615CDN-T1-GE3	8 V	9 mOhm	PowerPAK® 1212-8	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® 1212-8	63 nC	-55 °C	150 °C	35 A	P-Channel	1.8 V 4.5 V	3860 pF	20 V	33 W	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 35A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources