Discrete Semiconductor Products

BIDW40N65H5

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IGBT TRENCH FS 650V 80A TO247

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Discrete Semiconductor Products

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IGBT TRENCH FS 650V 80A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	BIDW40N65H5

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	111 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	300 W
Reverse Recovery Time (trr)	165 ns
Supplier Device Package	TO-247
Switching Energy	0.52 mJ, 1.9 mJ
Td (on/off) @ 25°C	28 ns, 116 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Test Condition	Reverse Recovery Time (trr)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power - Max [Max]	Switching Energy	IGBT Type	Td (on/off) @ 25°C	Mounting Type	Gate Charge	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic
Bourns Inc. BIDW40N65ES5	80 A	TO-247-3	650 V	1.7 V	10 Ohm 15 V 40 A 400 V	106 ns	175 °C	-40 °C	TO-247	230 W	580 µJ 630 µJ	Trench Field Stop	28 ns 150 ns	Through Hole	107 nC
Bourns Inc. BIDW40N65H5	80 A	TO-247-3	650 V		10 Ohm 15 V 40 A 400 V	165 ns	175 °C	-40 °C	TO-247	300 W	0.52 mJ 1.9 mJ	Trench Field Stop		Through Hole	111 nC	28 ns 116 ns	120 A	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 80 A 300 W Through Hole TO-247

Technical documentation and resources