Discrete Semiconductor Products

SI1427EDH-T1-GE3

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MOSFET P-CH 20V 2A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 2A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1427EDH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	2.8 W, 1.56 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1427EDH-T1-GE3	SC-70-6	2 A	20 V	1.56 W 2.8 W	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	Surface Mount	1.5 V 4.5 V	8 V	P-Channel	-55 °C	150 °C	21 nC	1 V	64 mOhm

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General part information

P-Channel 20 V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources