
Discrete Semiconductor Products
PBSS4140T-QR
ActiveNexperia USA Inc.
TRANSISTOR: NPN; BIPOLAR; 40V; 1A; 450MW; SOT23,TO236AB
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Discrete Semiconductor Products
PBSS4140T-QR
ActiveNexperia USA Inc.
TRANSISTOR: NPN; BIPOLAR; 40V; 1A; 450MW; SOT23,TO236AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4140T-QR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 300 |
| Frequency - Transition | 150 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS4140T-Q Series
NPN low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources