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Discrete Semiconductor Products

PBSS4140T-QR

Active
Nexperia USA Inc.

TRANSISTOR: NPN; BIPOLAR; 40V; 1A; 450MW; SOT23,TO236AB

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Primary product image
Discrete Semiconductor Products

PBSS4140T-QR

Active
Nexperia USA Inc.

TRANSISTOR: NPN; BIPOLAR; 40V; 1A; 450MW; SOT23,TO236AB

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4140T-QR
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]300
Frequency - Transition150 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.38
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
15000$ 0.05
21000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
TMEN/A 1$ 0.36
10$ 0.26
25$ 0.22
100$ 0.16
500$ 0.11

Description

General part information

PBSS4140T-Q Series

NPN low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.