Discrete Semiconductor Products

MCP90N12A-BP

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N-CHANNEL MOSFET,TO-220

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	MCP90N12A-BP

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Micro Commercial Components MCP90N12A-BP	-55 °C	150 °C	90 A	120 V	Through Hole	N-Channel	4600 pF	4.5 V 10 V	3 V	TO-220-3	20 V	TO-220AB	MOSFET (Metal Oxide)	72 nC	9 mOhm	166 W
Micro Commercial Components MCP90N06Y-BP	-55 °C	150 °C	90 A	60 V	Through Hole	N-Channel	2000 pF	4.5 V 10 V	2.5 V	TO-220-3	20 V	TO-220AB (H)	MOSFET (Metal Oxide)	34 nC	7.5 mOhm	83 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 120 V 90A (Tc) 166W Through Hole TO-220AB

Technical documentation and resources

No documents available