Discrete Semiconductor Products

SISF04DN-T1-GE3

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MOSFET 2N-CH 30V 30A PPAK 1212-8

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 30A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISF04DN-T1-GE3

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	108 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SCD
Power - Max	5.2 W, 69.4 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	PowerPAK® 1212-8SCD
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power - Max	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SISF04DN-T1-GE3	60 nC	PowerPAK® 1212-8SCD	Surface Mount	2 N-Channel (Dual) Common Drain	30 A 108 A	30 V	5.2 W 69.4 W	PowerPAK® 1212-8SCD	4 mOhm	2600 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Technical documentation and resources