Discrete Semiconductor Products

FDBL86210-F085

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MOSFET, AEC-Q101, N-CH, 150V, 169A, 500W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, AEC-Q101, N-CH, 150V, 169A, 500W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	FDBL86210-F085

Current - Continuous Drain (Id) @ 25°C	169 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5805 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	500 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	8-HPSOF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel PowerTrench<sup>®</sup> MOSFET, 150V, 169A, 6.3mΩ

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	FET Type	Grade	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDBL86210-F085	8-HPSOF	10 V	8-PowerSFN	5805 pF	150 V	90 nC	AEC-Q101	N-Channel	Automotive	500 W	MOSFET (Metal Oxide)	-55 °C	175 ░C	4 V	Surface Mount	6.3 mOhm	20 V	169 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel PowerTrench<sup>®</sup> MOSFET, 150V, 169A, 6.3mΩ

Technical documentation and resources