Discrete Semiconductor Products

HGTG11N120CN

Obsolete

IGBT 1200V 43A 298W TO247

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 43A 298W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	HGTG11N120CN

Current - Collector (Ic) (Max) [Max]	43 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	100 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	298 W
Supplier Device Package	TO-247-3
Switching Energy	400 µJ, 1.3 mJ
Td (on/off) @ 25°C	23 ns, 180 ns
Test Condition	10 Ohm, 11 A, 15 V, 960 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Switching Energy	Supplier Device Package	IGBT Type	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Gate Charge	Current - Collector (Ic) (Max) [Max]	Mounting Type	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor HGTG11N120CN	80 A	1200 V	23 ns 180 ns	1.3 mJ 400 µJ	TO-247-3	NPT	2.4 V	298 W	TO-247-3	100 nC	43 A	Through Hole	10 Ohm 11 A 15 V 960 V	-55 °C	150 °C
ON Semiconductor HGTG11N120CN	80 A	1200 V	23 ns 180 ns	1.3 mJ 400 µJ	TO-247	NPT	2.4 V	298 W	TO-247-3	100 nC	43 A	Through Hole	10 Ohm 11 A 15 V 960 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 1200 V 43 A 298 W Through Hole TO-247-3

Technical documentation and resources