Littelfuse Power Semi TO-220 3 H 3L image

Discrete Semiconductor Products

IXTP28P065T

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Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 65 V, 28 A, 0.045 OHM, TO-220AB, THROUGH HOLE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

IXTP28P065T

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 65 V, 28 A, 0.045 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP28P065T

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	65 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	2030 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTP28P065T Series

DiscMSFT PChan-Trench Gate TO-220AB/FP

Part	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Littelfuse/Commercial Vehicle Products IXTP28P065T	Through Hole	4.5 V	2030 pF	MOSFET (Metal Oxide)	28 A	45 mOhm	P-Channel	46 nC	TO-220-3	TO-220-3	10 V	15 V	-55 °C	150 °C	83 W	65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.59
		50	$ 2.84
		100	$ 2.44
		500	$ 2.17
		1000	$ 1.85
		2000	$ 1.75
		5000	$ 1.68

Description

General part information

IXTP28P065T Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching