Discrete Semiconductor Products

SI9434BDY-T1-E3

Obsolete

MOSFET P-CH 20V 4.5A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9434BDY-T1-E3

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs [Max]	40 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division SI9434BDY-T1-GE3	MOSFET (Metal Oxide)	18 nC	4.5 A	8-SOIC	3.9 mm	0.154 in	2.5 V 4.5 V	1.5 V	Surface Mount	40 mOhm	1.3 W	20 V	-55 °C	150 °C	8-SOIC	8 V	P-Channel
Vishay General Semiconductor - Diodes Division SI9434BDY-T1-E3	MOSFET (Metal Oxide)	18 nC	4.5 A	8-SOIC	3.9 mm	0.154 in	2.5 V 4.5 V	1.5 V	Surface Mount	40 mOhm	1.3 W	20 V	-55 °C	150 °C	8-SOIC	8 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Technical documentation and resources