Discrete Semiconductor Products

SI7802DN-T1-E3

Obsolete

MOSFET N-CH 250V 1.24A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 1.24A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI7802DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.24 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	435 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Supplier Device Package	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7802DN-T1-E3	250 V	3.6 V	MOSFET (Metal Oxide)	21 nC	PowerPAK® 1212-8	PowerPAK® 1212-8	20 V	N-Channel	6 V 10 V	-55 °C	150 °C	Surface Mount	1.5 W	435 mOhm	1.24 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 1.24A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources