Discrete Semiconductor Products
RFUH10NS6STL
ActiveRohm Semiconductor
SMALL SIGNAL SWITCHING DIODES DIODE SWITCHING 600V 10A
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Discrete Semiconductor Products
RFUH10NS6STL
ActiveRohm Semiconductor
SMALL SIGNAL SWITCHING DIODES DIODE SWITCHING 600V 10A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RFUH10NS6STL |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RFUH10NS6 Series
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
Documents
Technical documentation and resources