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ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

MMBTA06WT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 500 MA, 150 MW, SC-70, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+3
ONSEMI MMUN2236LT1G
Discrete Semiconductor Products

MMBTA06WT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 80 V, 500 MA, 150 MW, SC-70, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+3

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBTA06WT1G
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power - Max [Max]150 mW
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.18
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.18
10$ 0.11
100$ 0.07
500$ 0.05
1000$ 0.04
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Cut Tape) 250$ 0.04
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBTA06L Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.