Specification	KSC3503DSTU

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	7 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

KSC3503 Series

NPN Epitaxial Silicon Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Mounting Type	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSC3503CS	40	TO-126-3 TO-225AA	150 MHz	7 W	600 mV	NPN	100 mA	-55 °C	150 °C	300 V	TO-126-3	Through Hole	100 nA
ON Semiconductor KSC3503DSTU	40	TO-126-3 TO-225AA	150 MHz	7 W	600 mV	NPN	100 mA	-55 °C	150 °C	300 V	TO-126-3	Through Hole	100 nA
ON Semiconductor KSC3503ESTU	100	TO-126-3 TO-225AA	150 MHz	7 W	600 mV	NPN	100 mA	-55 °C	150 °C	300 V	TO-126-3	Through Hole	100 nA
ON Semiconductor KSC3503DSTSSTU	60	TO-126-3 TO-225AA	150 MHz	7 W	600 mV	NPN	100 mA	-55 °C	150 °C	300 V	TO-126-3	Through Hole	100 nA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources