Discrete Semiconductor Products

FZT658TA

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 500 MA, 3 W, SOT-223, SURFACE MOUNT

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 500 MA, 3 W, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	FZT658TA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Supplier Device Package
Diodes Inc FZT658TC	TO-261-4 TO-261AA	500 mV	50 MHz	40	Surface Mount	400 V	100 nA	-55 °C	150 °C	500 mA	NPN	2 W	SOT-223-3
Diodes Inc FZT658TA	TO-261-4 TO-261AA	500 mV	50 MHz	40	Surface Mount	400 V	100 nA	-55 °C	150 °C	500 mA	NPN	2 W	SOT-223-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

BVCEO > 400V

IC = 500mA High Continuous Current

ICM = 1A Peak Pulse Current

Technical documentation and resources