IXFK180N25T
ActivePOWER MOSFET, N CHANNEL, 250 V, 180 A, 0.0129 OHM, TO-264, THROUGH HOLE
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IXFK180N25T
ActivePOWER MOSFET, N CHANNEL, 250 V, 180 A, 0.0129 OHM, TO-264, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFK180N25T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 345 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-264AA, TO-264-3 |
| Power Dissipation (Max) | 1390 W |
| Rds On (Max) @ Id, Vgs | 12.9 mOhm |
| Supplier Device Package | TO-264AA (IXFK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 20.31 | |
| 10 | $ 14.55 | |||
| 100 | $ 11.43 | |||
Description
General part information
IXFK180N25T Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources