Discrete Semiconductor Products

PMV48XP,215

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MOSFET P-CH 20V 3.5A TO236AB

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Discrete Semiconductor Products

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MOSFET P-CH 20V 3.5A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV48XP,215

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	510 mW
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMV48XPVL	55 mOhm	20 V	TO-236AB	P-Channel	11 nC	MOSFET (Metal Oxide)	Surface Mount	2.5 V 4.5 V	1.25 V	3.5 A	1000 pF	SC-59 SOT-23-3 TO-236-3	150 °C	12 V	510 mW
Freescale Semiconductor - NXP PMV48XP,215	55 mOhm	20 V	TO-236AB	P-Channel	11 nC	MOSFET (Metal Oxide)	Surface Mount	2.5 V 4.5 V	1.25 V	3.5 A	1000 pF	SC-59 SOT-23-3 TO-236-3		12 V	510 mW	-55 °C	150 °C
Freescale Semiconductor - NXP PMV48XP/ZLR	55 mOhm	20 V	TO-236AB	P-Channel	11 nC	MOSFET (Metal Oxide)	Surface Mount	2.5 V 4.5 V	1.25 V	3.5 A	1000 pF	SC-59 SOT-23-3 TO-236-3	150 °C	12 V	4.15 W 510 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 3.5A (Ta) 510mW (Ta) Surface Mount TO-236AB

Technical documentation and resources