Discrete Semiconductor Products

NTP011N15MC

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MOSFET - N-CHANNEL SHIELDED GATE POWERTRENCH® 150 V, 10.9 MΩ, 74.3 A

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Discrete Semiconductor Products

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MOSFET - N-CHANNEL SHIELDED GATE POWERTRENCH® 150 V, 10.9 MΩ, 74.3 A

Technical Specifications

Parameters and characteristics for this part

Specification	NTP011N15MC

Current - Continuous Drain (Id) @ 25°C	9.8 A, 74.3 A
Drain to Source Voltage (Vdss)	150 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	136.4 W, 2.4 W
Rds On (Max) @ Id, Vgs	10.9 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 10.9 mΩ, 74.3 A

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Technology
ON Semiconductor NTP011N15MC	TO-220	150 V	2810 pF	10.9 mOhm	N-Channel	TO-220-3	Through Hole	-55 °C	175 ░C	4.5 V	9.8 A 74.3 A	2.4 W 136.4 W	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - N-Channel Shielded Gate PowerTrench®150 V, 10.9 mΩ, 74.3 A

Technical documentation and resources