RJK03E0DNS-00#J5

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POWER FIELD-EFFECT TRANSISTOR

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Discrete Semiconductor Products

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POWER FIELD-EFFECT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03E0DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15.2 nC
Input Capacitance (Ciss) (Max) @ Vds	3050 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Technology	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK03E0DNS-00#J5	MOSFET (Metal Oxide)	N-Channel	5.6 mOhm	15.2 nC	3050 pF	Surface Mount	8-HWSON (3.3x3.3)	150 °C	20 W	30 V	8-PowerWDFN	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	319	$ 0.94

General part information

The RJK03E0DNS is a N Channel Power MOSFET.

Technical documentation and resources