Discrete Semiconductor Products
RQ6E035TNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 3.5A, 150DEG C, 1.25W
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Discrete Semiconductor Products
RQ6E035TNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 3.5A, 150DEG C, 1.25W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6E035TNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 285 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) | 950 mW |
| Rds On (Max) @ Id, Vgs | 54 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6E035 Series
The small surface mount package RQ6E035AT is suitable for switching.
Documents
Technical documentation and resources
