Discrete Semiconductor Products

SIR172ADP-T1-GE3

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MOSFET N-CH 30V 24A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 24A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR172ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	1515 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	29.8 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Technology
Vishay General Semiconductor - Diodes Division SIR172ADP-T1-GE3	29.8 W	PowerPAK® SO-8	1515 pF	4.5 V 10 V	30 V	24 A	N-Channel	44 nC	Surface Mount	8.5 mOhm	20 V	-55 °C	150 °C	2.4 V	PowerPAK® SO-8	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 24A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources