Specification	NTB125N02RG

Current - Continuous Drain (Id) @ 25°C	120.5 A, 95 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	3440 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	113.6 W, 1.98 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTX110N02R Series

Power MOSFET 125 Amps, 24 Volts, N-channel D2PAK and TO-220

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Mounting Type
ON Semiconductor NTB125N02RT4
ON Semiconductor NTB125N02R	28 nC	4.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3440 pF	2 V	-55 °C	150 °C	D2PAK	95 A 120.5 A	MOSFET (Metal Oxide)	24 V	1.98 W 113.6 W	4.5 V 10 V	N-Channel	20 V	Surface Mount
ON Semiconductor NTB125N02RG	28 nC	4.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3440 pF	2 V	-55 °C	150 °C	D2PAK	95 A 120.5 A	MOSFET (Metal Oxide)	24 V	1.98 W 113.6 W	4.5 V 10 V	N-Channel	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 125 Amp,24 Volt, N-channel D2PAK/TO-220

Technical documentation and resources