Discrete Semiconductor Products

NTMYS3D5N04CTWG

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POWER MOSFET 40 V, 3.3Ω, 102 A, SINGLE N-CHANNEL

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Discrete Semiconductor Products

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POWER MOSFET 40 V, 3.3Ω, 102 A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	NTMYS3D5N04CTWG

Current - Continuous Drain (Id) @ 25°C	24 A, 102 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	68 W, 3.6 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Power MOSFET 40 V, 3.3Ω, 102 A, Single N-Channel

Part	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)
ON Semiconductor NTMYS3D5N04CTWG	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	3.6 W 68 W	5	LFPAK4	6	SOT-1023 4-LFPAK	23 nC	1600 pF	Surface Mount	3.3 mOhm	40 V	10 V	24 A 102 A	3.5 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.