Specification	CSD88539ND

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	741 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.1 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.6 V

CSD88539ND Series

60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm

Part	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
Texas Instruments CSD88539ND	60 V	Surface Mount	2 N-Channel (Dual)	MOSFET (Metal Oxide)	15 A	9.4 nC	741 pF	3.6 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	2.1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low-current motor control applications.

Technical documentation and resources