Specification	ISL9K460P3

Current - Average Rectified (Io) (per Diode)	4 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	22 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.4 V

ISL9K460P3 Series

8A, 600V, STEALTH™ Dual Diode

Part	Package / Case	Mounting Type	Reverse Recovery Time (trr)	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
ON Semiconductor ISL9K460P3	TO-220-3	Through Hole	22 ns	200 mA 500 ns	TO-220-3	175 ░C	-55 C	4 A	1 Pair Common Cathode	Avalanche	2.4 V	600 V	100 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ISL9K460P3 Series

The ISL9K460P3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRand short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.