Discrete Semiconductor Products

IRF710STRLPBF

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MOSFET N-CH 400V 2A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 400V 2A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRF710STRLPBF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 36 W
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division IRF710SPBF	400 V	Surface Mount	-55 °C	150 °C	170 pF	4 V	17 nC	10 V	20 V	3.6 Ohm	TO-263 (D2PAK)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 36 W	2 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF710L	400 V	Through Hole	-55 °C	150 °C	170 pF	4 V	17 nC	10 V	20 V	3.6 Ohm	I2PAK	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA		2 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF710PBF	400 V	Through Hole	-55 °C	150 °C	170 pF	4 V	17 nC	10 V	20 V	3.6 Ohm	TO-220AB	N-Channel	TO-220-3	36 W	2 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF710STRLPBF	400 V	Surface Mount	-55 °C	150 °C	170 pF	4 V	17 nC	10 V	20 V	3.6 Ohm	TO-263 (D2PAK)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.1 W 36 W	2 A	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF710	400 V	Through Hole	-55 °C	150 °C	170 pF	4 V	17 nC	10 V	20 V	3.6 Ohm	TO-220AB	N-Channel	TO-220-3	36 W	2 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 400 V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources