Specification	NTMFS4852NT3G

Current - Continuous Drain (Id) @ 25°C	155 A, 16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71.3 nC
Input Capacitance (Ciss) (Max) @ Vds	4970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	86.2 W, 900 mW
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTMFS4852N Series

Single N-Channel Power MOSFET 30V, 155A, 2.1mΩ

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor NTMFS4852NT3G	MOSFET (Metal Oxide)	16 A 155 A	5-DFN (5x6)	8-SOFL	30 V	N-Channel	2.1 mOhm	20 V	86.2 W 900 mW	4.5 V 10 V	71.3 nC	8-PowerTDFN 5 Leads	4970 pF	Surface Mount	-55 °C	150 °C	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 30 V N-Channel Power MOSFET.

Technical documentation and resources