Discrete Semiconductor Products
BAT854CW,115
ActiveFreescale Semiconductor - NXP
40 V, 200 MA SCHOTTKY BARRIER DUAL DIODE
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Search across all available documentation for this part.
Discrete Semiconductor Products
BAT854CW,115
ActiveFreescale Semiconductor - NXP
40 V, 200 MA SCHOTTKY BARRIER DUAL DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BAT854CW,115 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 200 mA |
| Current - Reverse Leakage @ Vr | 500 nA |
| Diode Configuration | 1 Pair Common Cathode |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | SC-70, SOT-323 |
| Qualification | AEC-Q100 |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | SOT-323 |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 40 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 550 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BAT854 Series
Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources
