Discrete Semiconductor Products

SI7409ADN-T1-GE3

Obsolete

MOSFET P-CH 30V 7A PPAK 1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 7A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7409ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7409ADN-T1-GE3	Surface Mount	MOSFET (Metal Oxide)	2.5 V 4.5 V	30 V	-55 °C	150 °C	PowerPAK® 1212-8	P-Channel	1.5 V	PowerPAK® 1212-8	7 A	12 V	1.5 W	19 mOhm	40 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources

No documents available