Specification	NTMFWS1D5N08XT1G

Current - Continuous Drain (Id) @ 25°C	253 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Input Capacitance (Ciss) (Max) @ Vds	5880 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs	1.43 mOhm
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

NTMFWS1D5N08X Series

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mΩ, 253 A

Part	Technology	Vgs (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor NTMFWS1D5N08XT1G	MOSFET (Metal Oxide)	20 V	Surface Mount Wettable Flank	N-Channel	-55 °C	175 ░C	5880 pF	1.43 mOhm	80 V	3.6 V	83 nC	6 V 10 V	8-PowerTDFN 5 Leads	253 A	4.9x5.9 5-DFNW 8-SOFL-WF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.82
		10	$ 2.51
		100	$ 1.76
		500	$ 1.44
	Digi-Reel®	1	$ 3.82
		10	$ 2.51
		100	$ 1.76
		500	$ 1.44
	Tape & Reel (TR)	1500	$ 1.31
Newark	Each (Supplied on Cut Tape)	1	$ 3.62
ON Semiconductor	N/A	1	$ 1.40

General part information

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mΩ, 253 A

Technical documentation and resources