Discrete Semiconductor Products

SI7234DP-T1-GE3

Active

MOSFET 2N-CH 12V 60A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 12V 60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7234DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	12 V
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	46 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Configuration	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI7234DP-T1-GE3	1.5 V	12 V	46 W	2 N-Channel (Dual)	MOSFET (Metal Oxide)	3.4 mOhm	5000 pF	60 A	-55 °C	150 °C	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	Surface Mount	120 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 12V 60A 46W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources