Specification	NSS35200MR6T1G

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	625 mW
Supplier Device Package	6-TSOP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	310 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	35 V

NSS35200MR6T1G Series

Low VCE(sat) Transistor, PNP, 35 V, 2.0 A

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	Transistor Type	Power - Max [Max]	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor NSS35200MR6T1G	-55 °C	150 °C	2 A	35 V	310 mV	100 MHz	PNP	625 mW	SOT-23-6 Thin TSOT-23-6	6-TSOP	100	100 nA	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.88
		10	$ 0.55
		100	$ 0.35
		500	$ 0.27
	Digi-Reel®	1	$ 0.59
		10	$ 0.50
		100	$ 0.35
		500	$ 0.27

Description

General part information

NSS35200MR6T1G Series

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.