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SOT-363
Discrete Semiconductor Products

MBT6429DW1T1G

Active
ON Semiconductor

TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 45V

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SOT-363
Discrete Semiconductor Products

MBT6429DW1T1G

Active
ON Semiconductor

TRANSISTOR ARRAY, AEC-Q101, DUAL NPN, 45V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMBT6429DW1T1G
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]500
Frequency - Transition700 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.23
10$ 0.14
100$ 0.09
500$ 0.06
1000$ 0.06
Digi-Reel® 1$ 0.23
10$ 0.14
100$ 0.09
500$ 0.06
1000$ 0.06
Tape & Reel (TR) 3000$ 0.05
6000$ 0.04
9000$ 0.04
15000$ 0.04
21000$ 0.03
30000$ 0.03
75000$ 0.03
150000$ 0.03
300000$ 0.03
NewarkEach (Supplied on Cut Tape) 1$ 0.25
10$ 0.16
25$ 0.14
50$ 0.12
100$ 0.10
250$ 0.09
500$ 0.08
1000$ 0.07
ON SemiconductorN/A 1$ 0.03

Description

General part information

MBT6429DW1 Series

The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.