Discrete Semiconductor Products

FQA10N80_F109

Obsolete

ON Semiconductor

MOSFET N-CH 800V 9.8A TO3P

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Discrete Semiconductor Products

FQA10N80_F109

Obsolete

ON Semiconductor

MOSFET N-CH 800V 9.8A TO3P

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQA10N80_F109

Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs [Max]	1.05 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQA1 Series

Part	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQA11N90C	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3P	3290 pF	1.1 Ohm	-55 °C	150 °C	300 W	N-Channel	80 nC	900 V	10 V	11 A	Through Hole
ON Semiconductor FQA17N40	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3P	2300 pF	270 mOhm	-55 °C	150 °C	190 W	N-Channel		400 V	10 V	17.2 A	Through Hole	60 nC
ON Semiconductor FQA10N60C	MOSFET (Metal Oxide)	30 V	4 V	SC-65-3 TO-3P-3	TO-3P	2040 pF	730 mOhm	-55 °C	150 °C		N-Channel	57 nC	600 V	10 V	10 A	Through Hole		192 W
ON Semiconductor FQA16N25C	MOSFET (Metal Oxide)	30 V	4 V	SC-65-3 TO-3P-3	TO-3P	1080 pF		-55 °C	150 °C		N-Channel	53.5 nC	250 V	10 V	17.8 A	Through Hole		180 W	270 mOhm
ON Semiconductor FQA16N50	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3P		320 mOhm	-55 °C	150 °C		N-Channel		500 V	10 V	16 A	Through Hole	75 nC	200 W
ON Semiconductor FQA13N50CF_F109	MOSFET (Metal Oxide)	30 V	4 V	SC-65-3 TO-3P-3	TO-3PN	2055 pF	480 mOhm	-55 °C	150 °C		N-Channel	56 nC	500 V	10 V	15 A	Through Hole		218 W
ON Semiconductor FQA10N80_F109	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3P			-55 °C	150 °C		N-Channel		800 V	10 V		Through Hole	71 nC	240 W	1.05 Ohm
ON Semiconductor FQA19N20L	MOSFET (Metal Oxide)	20 V	2 V	SC-65-3 TO-3P-3	TO-3P	2200 pF	140 mOhm	-55 °C	150 °C	190 W	N-Channel		200 V		25 A	Through Hole	35 nC			10 V	5 V
ON Semiconductor FQA16N50	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3P		320 mOhm	-55 °C	150 °C		N-Channel		500 V	10 V	16 A	Through Hole	75 nC	200 W
ON Semiconductor FQA13N80	MOSFET (Metal Oxide)	30 V	5 V	SC-65-3 TO-3P-3	TO-3PN	3500 pF	750 mOhm	-55 °C	150 °C	300 W	N-Channel	88 nC	800 V	10 V	12.6 A	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQA1 Series

N-Channel 800 V 9.8A (Tc) 240W (Tc) Through Hole TO-3P

Documents

Technical documentation and resources