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QRD1113
Sensors, Transducers

QRD1113

Active
ON Semiconductor

REFLECTIVE OBJECT SENSOR, PHOTOTRANSISTOR, THROUGH HOLE MOUNT, 1.7 V FORWARD, 5 V REVERSE

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QRD1113
Sensors, Transducers

QRD1113

Active
ON Semiconductor

REFLECTIVE OBJECT SENSOR, PHOTOTRANSISTOR, THROUGH HOLE MOUNT, 1.7 V FORWARD, 5 V REVERSE

Technical Specifications

Parameters and characteristics for this part

SpecificationQRD1113
Current - DC Forward (If) (Max)50 mA
Mounting TypeThrough Hole
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / CaseRadial - 4 Leads
Response Time50 µs, 10 µs
Sensing Distance0.05 in
Sensing Distance1.27 mm
Sensing MethodReflective
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 1.66
5$ 1.40
10$ 1.30
25$ 1.18
50$ 1.09
100$ 1.02
500$ 0.86
1000$ 0.80
5000$ 0.67
NewarkEach 1$ 1.49
10$ 1.29
100$ 1.24
500$ 1.17
1000$ 1.13
2500$ 1.09
10000$ 1.05
ON SemiconductorN/A 1$ 0.64

Description

General part information

QRD1113 Series

The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.