Discrete Semiconductor Products

MPF960

Obsolete

MOSFET N-CH 60V 2A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 2A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPF960

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	70 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.7 Ohm
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor MPF960	MOSFET (Metal Oxide)	10 V	Through Hole	TO-92	TO-226	3.5 V	-55 °C	150 °C	2 A	N-Channel	70 pF	TO-226-3 TO-92-3 Long Body	60 V	1 W	20 V	1.7 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 2A (Ta) 1W (Ta) Through Hole TO-92 (TO-226)

Technical documentation and resources