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HIP6601B_HIP6603B Functional Diagram
Integrated Circuits (ICs)

HIP6603BCBZ-T

Obsolete
Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVERS

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HIP6601B_HIP6603B Functional Diagram
Integrated Circuits (ICs)

HIP6603BCBZ-T

Obsolete
Renesas Electronics Corporation

SYNCHRONOUS RECTIFIED BUCK MOSFET DRIVERS

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Technical Specifications

Parameters and characteristics for this part

SpecificationHIP6603BCBZ-T
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]15 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]20 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]13.2 V
Voltage - Supply [Min]10.8 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HIP6603B Series

The HIP6601B, HIP6603B and HIP6604B are high-frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with a HIP63xx or the ISL65xx series of Multi-Phase Buck PWM controllers and MOSFETs form a complete core-voltage regulator solution for advanced microprocessors. The HIP6601B drives the lower gate in a synchronous rectifier to 12V, while the upper gate can be independently driven over a range from 5V to 12V. The HIP6603B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses. The HIP6604B can be configured as either a HIP6601B or a HIP6603B. The output drivers in the HIP6601B, HIP6603B and HIP6604B have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. These products implement bootstrapping on the upper gate with only an external capacitor required. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.

Documents

Technical documentation and resources