Specification	NTGS4111PT1G

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	630 mW
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTGS4111P Series

Single P-Channel Power MOSFET -30V -4.7A 60mΩ

Part	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NTGS4111PT1G	6-TSOP	3 V	P-Channel	SOT-23-6 Thin TSOT-23-6	630 mW	2.6 A	4.5 V 10 V	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	32 nC	750 pF	30 V	Surface Mount	60 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6

Technical documentation and resources