Discrete Semiconductor Products

RQK0607AQDQS#H1

Obsolete

NCH SINGLE POWER MOSFET 60V 2.4A 270MOHM UPAK/SC-62

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 2.4A 270MOHM UPAK/SC-62

Technical Specifications

Parameters and characteristics for this part

Specification	RQK0607AQDQS#H1

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	UPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

Nch Single Power Mosfet 60V 2.4A 270Mohm Upak/Sc-62

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]
Renesas Electronics Corporation RQK0607AQDQS#H1	2 nC	MOSFET (Metal Oxide)	N-Channel	270 mOhm	150 °C	2.4 A	12 V	Surface Mount	TO-243AA	UPAK	60 V	2.5 V	4.5 V	1.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RQK0607AQDQS is a Nch Single Power Mosfet 60V 2.4A 270Mohm Upak/Sc-62.

Technical documentation and resources