Discrete Semiconductor Products

KSC2690YSTU

Obsolete

TRANS NPN 120V 1.2A TO126-3

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Discrete Semiconductor Products

Obsolete

TRANS NPN 120V 1.2A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC2690YSTU

Current - Collector (Ic) (Max) [Max]	1.2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Frequency - Transition	155 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.2 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Power - Max [Max]	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]
ON Semiconductor KSC2690YSTU	1.2 W	NPN	150 °C	160 hFE	155 MHz	120 V	700 mV	Through Hole	TO-126-3	1.2 A	TO-126-3 TO-225AA	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 1.2 A 155MHz 1.2 W Through Hole TO-126-3

Technical documentation and resources