Discrete Semiconductor Products

FDY4001CZ

Obsolete

MOSFET N/P-CH 20V 0.2A SOT563F

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 0.2A SOT563F

Technical Specifications

Parameters and characteristics for this part

Specification	FDY4001CZ

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	200 mA, 150 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	446 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-563F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor FDY4001CZ	Surface Mount	SOT-563 SOT-666	150 mA 200 mA	SOT-563F	MOSFET (Metal Oxide)	5 Ohm	446 mW	60 pF	-55 °C	150 °C	Logic Level Gate	N and P-Channel	1.1 nC	20 V	1.5 V
ON Semiconductor FDY4001CZ	Surface Mount	SOT-563 SOT-666	150 mA 200 mA	SOT-563F	MOSFET (Metal Oxide)	5 Ohm	446 mW	60 pF	-55 °C	150 °C	Logic Level Gate	N and P-Channel	1.1 nC	20 V	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 200mA, 150mA 446mW Surface Mount SOT-563F

Technical documentation and resources