Discrete Semiconductor Products

PMZ390UNEYL

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MOSFET N-CH 30V 900MA DFN1006-3

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Discrete Semiconductor Products

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MOSFET N-CH 30V 900MA DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ390UNEYL

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.3 nC
Input Capacitance (Ciss) (Max) @ Vds	41 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	350 mW, 5.43 W
Rds On (Max) @ Id, Vgs	470 mOhm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMZ390UN,315	N-Channel	SOT-883	-55 °C	150 °C	950 mV	0.89 nC	43 pF	1.8 V 4.5 V	8 V	1.78 A	MOSFET (Metal Oxide)	SC-101 SOT-883	30 V	460 mOhm	Surface Mount	2.5 W
Freescale Semiconductor - NXP PMZ390UNEYL	N-Channel	SOT-883	-55 °C	150 °C	950 mV		41 pF	1.5 V 4.5 V	8 V	900 mA	MOSFET (Metal Oxide)	SC-101 SOT-883	30 V	470 mOhm	Surface Mount	5.43 W 350 mW	1.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount SOT-883

Technical documentation and resources